| PART |
Description |
Maker |
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Microsemi, Corp.
|
| 2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| ESDA14V2-2BF ESDA14V2-2BF3 ESDA14V2-2BX |
Quad bidirectional Transi array for ESD protection
|
STMicroelectronics
|
| UPB556C |
150 Mhz Divide By 16/17 Low Power Prescaler
|
NEC
|
| UF28150J |
POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V
|
Tyco Electronics
|
| PTB20237 |
150 Watts 470-860 MHz UHF TV Power Transistor
150 Watts, 470-860 MHz UHF TV Power Transistor
|
ERICSSON[Ericsson]
|
| ZOS-300 |
VCO, 150 MHz - 280 MHz CASE BR386
VCO, 150 MHz - 280 MHz ROHS COMPLIANT, CASE BR386
|
Mini-Circuits
|
| PTFB211503EL PTFB211503FL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| MRF151 |
RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| PTFA091503EL |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 920-960 MHz
|
Infineon Technologies AG
|
| MCP6L71RT-E_MS MCP6L71RT-E_OT MCP6L71RT-E_SL MCP6L |
2 MHz, 150 μA Op Amps
2 MHz, 150 渭A Op Amps
2 MHz, 150 楼矛A Op Amps
|
Microchip Technology
|
